(11-02)r面蓝宝石生长的(112-0)a面氮化镓研究

J4 ›› 2009, Vol. 36 ›› Issue (6): 1049-1052+1058.

(11-02)r面蓝宝石生长的(112-0)a面氮化镓研究

许晟瑞;段焕涛;郝跃;张进城;张金凤;倪金玉;胡仕刚;李志明

(西安电子科技大学宽禁带半导体材料与器件教育部重点实验室，陕西西安 710071)

收稿日期:2008-09-06 出版日期:2009-12-20 发布日期:2010-01-20
作者简介:许晟瑞(1981-)，男，西安电子科技大学博士研究生，E-mail: shengruixidian@126.com．
基金资助:
国家自然科学基金重点项目资助(60736033);973计划项目资助(513270407)

Study of (112-0) non polar a-plane GaN on the (11-02) r-plane sapphire

XU Sheng-rui;DUAN Huan-tao;HAO Yue;ZHANG Jin-cheng;ZHANG Jin-feng;NI Jin-yu;HU Shi-gang;LI Zhi-ming

(Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071， China)

Received:2008-09-06 Online:2009-12-20 Published:2010-01-20

摘要/Abstract

摘要：

自发极化和压电极化是氮化镓制作光电器件没有解决的问题，对非极性GaN材料的研究解决了极化现象．采用低温AlN作为缓冲层，在(11-02)r面蓝宝石和(0001)c面蓝宝石上分别生长了(112-0)非极性a面和(0001)极性c面GaN，用原子力显微镜和高分辨X射线衍射、光致发光谱比较了生长在r面蓝宝石上的a面GaN和c面蓝宝石上的c面GaN，a面GaN材料质量和c面GaN相差较大，在a面GaN上发现了三角坑的表面形貌，这和传统的c面生长的极性GaN截然不同．对a面GaN的缺陷形成原因进行了讨论，并且确定了三角坑缺陷的晶向．

关键词: 缺陷, 氮化镓, X射线衍射, 非极性

Abstract:

The spontaneous and piezoelectric polarizatio represent one of the unsolved problems in utilizing GaN for fabricating light-emitting devices. To solve the problem, non-polar GaN structures have been studied. Low-temperature AlN buffers are used for (112-0) a-plane GaN growth on the (11-02) r-plane sapphire. A combination of atomic force microscopy (AFM), high resolution X-ray diffraction (XRD) and photoluminescence (PL) spectrum is used to characterize dislocation of the (112-0) a-plane and (0001) c-plane GaN epilayer. Compared with the typical hexagonal dislocation of c-plane GaN, this shows great difference with the conventional polar GaN, and the pit of the a-plane GaN epilayer is triangle, with the possible formation mechanisms of these faults discussed and the triangular pit directions also investigated.

Key words: dislocation, GaN, X-ray diffraction, nonpolar

中图分类号:

TN325

许晟瑞;段焕涛;郝跃;张进城;张金凤;倪金玉;胡仕刚;李志明. (11-02)r面蓝宝石生长的(112-0)a面氮化镓研究[J]. J4, 2009, 36(6): 1049-1052+1058.

XU Sheng-rui;DUAN Huan-tao;HAO Yue;ZHANG Jin-cheng;ZHANG Jin-feng;NI Jin-yu;HU S. Study of (112-0) non polar a-plane GaN on the (11-02) r-plane sapphire[J]. J4, 2009, 36(6): 1049-1052+1058.

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