J4 ›› 2009, Vol. 36 ›› Issue (6): 1049-1052+1058.

• 研究论文 • 上一篇    下一篇

(11-02)r面蓝宝石生长的(112-0)a面氮化镓研究

许晟瑞;段焕涛;郝跃;张进城;张金凤;倪金玉;胡仕刚;李志明   

  1. (西安电子科技大学 宽禁带半导体材料与器件教育部重点实验室,陕西 西安  710071)
  • 收稿日期:2008-09-06 出版日期:2009-12-20 发布日期:2010-01-20
  • 通讯作者: 许晟瑞
  • 作者简介:许晟瑞(1981-),男,西安电子科技大学博士研究生,E-mail: shengruixidian@126.com.
  • 基金资助:

    国家自然科学基金重点项目资助(60736033);973计划项目资助(513270407)

Study of (112-0) non polar a-plane GaN on the (11-02) r-plane sapphire

XU Sheng-rui;DUAN Huan-tao;HAO Yue;ZHANG Jin-cheng;ZHANG Jin-feng;NI Jin-yu;HU Shi-gang;LI Zhi-ming   

  1. (Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an  710071, China)
  • Received:2008-09-06 Online:2009-12-20 Published:2010-01-20
  • Contact: XU Sheng-rui

摘要:

自发极化和压电极化是氮化镓制作光电器件没有解决的问题,对非极性GaN材料的研究解决了极化现象.采用低温AlN作为缓冲层,在(11-02)r面蓝宝石和(0001)c面蓝宝石上分别生长了(112-0)非极性a面和(0001)极性c面GaN,用原子力显微镜和高分辨X射线衍射、光致发光谱比较了生长在r面蓝宝石上的a面GaN和c面蓝宝石上的c面GaN,a面GaN材料质量和c面GaN相差较大,在a面GaN上发现了三角坑的表面形貌,这和传统的c面生长的极性GaN截然不同.对a面GaN的缺陷形成原因进行了讨论,并且确定了三角坑缺陷的晶向.

关键词: 缺陷, 氮化镓, X射线衍射, 非极性

Abstract:

The spontaneous and piezoelectric polarizatio represent one of the unsolved problems in utilizing GaN for fabricating light-emitting devices. To solve the problem, non-polar GaN structures have been studied. Low-temperature AlN buffers are used for (112-0) a-plane GaN growth on the (11-02) r-plane sapphire. A combination of atomic force microscopy (AFM), high resolution X-ray diffraction (XRD) and photoluminescence (PL) spectrum is used to characterize dislocation of the (112-0) a-plane and (0001) c-plane GaN epilayer. Compared with the typical hexagonal dislocation of c-plane GaN, this shows great difference with the conventional polar GaN, and the pit of the a-plane GaN epilayer is triangle, with the possible formation mechanisms of these faults discussed and the triangular pit directions also investigated.

Key words: dislocation, GaN, X-ray diffraction, nonpolar

中图分类号: 

  • TN325