电磁脉冲作用下二极管二次击穿电热特性

doi:10.3969/j.issn.1001-2400.2013.02.007

J4 ›› 2013, Vol. 40 ›› Issue (2): 36-42.doi: 10.3969/j.issn.1001-2400.2013.02.007

电磁脉冲作用下二极管二次击穿电热特性

任兴荣;柴常春;马振洋;杨银堂

(西安电子科技大学宽禁带半导体材料与器件教育部重点实验室，陕西西安 710071)

收稿日期:2011-11-15 出版日期:2013-04-20 发布日期:2013-05-22
通讯作者: 任兴荣
作者简介:任兴荣(1986-)，男，西安电子科技大学博士研究生，E-mail: xrren1986@163.com．
基金资助:
国家自然科学基金资助项目(60776034)

Electrothermal characteristics of second breakdown in diodes under the EMP stress

REN Xingrong;CHAI Changchun;MA Zhenyang;YANG Yintang

(Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071， China)

Received:2011-11-15 Online:2013-04-20 Published:2013-05-22
Contact: REN Xingrong

摘要/Abstract

摘要：

对p-n-n⁺二极管在电磁脉冲作用下的二次击穿过程进行了二维瞬态电热仿真，研究了二次击穿过程中二极管内部的电场和电流密度分布以及端电压和端电流随电磁脉冲作用时间的变化，探索了二次击穿触发温度、触发电流和触发能量随延迟时间的变化规律．研究结果表明，电磁脉冲作用下二极管的二次击穿属于热二次击穿，电流集中并非二次击穿发生的必要条件，触发温度和触发电流随延迟时间的减小而增大，但触发能量则随延迟时间的减小而减小，仿真得到的电磁脉冲损伤能量阈值与实验数据吻合较好．

关键词: 电磁脉冲, 二极管, 二次击穿, 触发温度, 损伤阈值

Abstract:

2D transient electrothermal simulations are carried out of the second breakdown in a diode with a p-n-n⁺ structure under the EMP stress. The paper begins with a study of the variations of the electric field and the current density distribution in a diode as well as the terminal voltage and the terminal current with the time duration of the EMP stress, followed by a research on the variations of the trigger temperature, trigger current and trigger energy with the delay time of the second breakdown. The research results show that the second breakdown in diodes is caused by the thermal effect, and that the current concentration is not its necessary condition. In addition, the triggering temperature and triggering current increase with a decrease in the delay time, while the triggering energy decreases with a decrease in the delay time. Computational permanent damage threshold energies of the diode are in good agreement with experimental data.

Key words: electromagnetic pulse, p-n-n<sup>+</sup>, diode, second breakdown, triggering temperature, damage threshold

中图分类号:

TN306

任兴荣;柴常春;马振洋;杨银堂. 电磁脉冲作用下二极管二次击穿电热特性[J]. J4, 2013, 40(2): 36-42.

REN Xingrong;CHAI Changchun;MA Zhenyang;YANG Yintang. Electrothermal characteristics of second breakdown in diodes under the EMP stress[J]. J4, 2013, 40(2): 36-42.

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电磁脉冲作用下二极管二次击穿电热特性

Electrothermal characteristics of second breakdown in diodes under the EMP stress

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