J4 ›› 2009, Vol. 36 ›› Issue (6): 1039-1043.

• 研究论文 • 上一篇    下一篇

X 波段单级氮化镓固态放大器

陈炽;郝跃;冯辉;马晓华;张进城;胡仕刚   

  1. (西安电子科技大学 宽禁带半导体材料与器件教育部重点实验室,陕西 西安  710071)
  • 收稿日期:2009-03-03 出版日期:2009-12-20 发布日期:2010-01-20
  • 通讯作者: 陈炽
  • 作者简介:陈炽(1978-),男,西安电子科技大学博士研究生,E-mail: chenchi@mail.xidian.edu.cn.
  • 基金资助:

    国家自然科学基金重点基金支持研究项目资助(60736033)

X-band single stage GaN solid-state power amplifier

CHEN Chi;HAO Yue;FENG Hui;MA Xiao-hua;ZHANG Jin-cheng;HU Shi-gang   

  1. (Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an  710071, China)
  • Received:2009-03-03 Online:2009-12-20 Published:2010-01-20
  • Contact: CHEN Chi

摘要:

利用自主研制的SiC 衬底的栅宽为2.5mm的AlGaN/GaN HEMT器件,设计完成了单级X波段氮化镓固态放大器模块.模块由AlGaN/GaN HEMT器件、偏置电路和微带匹配电路构成.采用金属腔体和测试夹具,保证在连续波下具有良好的接地和散热性能.利用双偏置电路馈电,并且采用独特的电容电阻网络和栅极串联电阻消除了低频和射频振荡.利用微带短截线完成了器件的输入输出匹配.在 8GHz频率及连续波情况下(直流偏置电压为 Vds= 27V, Vgs= -4.0V),放大器线性增益为 5.6dB,最大效率为30.5%,输出功率最大可达 40.25dBm (10.5W),此时增益压缩为 2dB.在带宽为 500MHz内,输出功率变化为 1dB.

关键词: AlGaN/GaN HEMT, 固态放大器模块, 饱和输出功率, 增益压缩, 功率附加效率

Abstract:

Based on the self-developed AlGaN/GaN HEMT with 2.5-mm gate width technology on the SiC substrate, the X-band GaN solid-state power amplifier module is fabricated. The module consists of the AlGaN/GaN HEMT, DC-bias circuit and microstrip line. The chamber structure made of metal and the test fixture are designed for grounding and thermal transmission under the CW operating condition. Two section bias circuits for the AlGaN/GaN HEMT are presented. The special R-C networks and gate resistance are used for cancellation of self-oscillation at both the low frequency and radio frequency. The microstrip stubs are used for input matching and output matching. Under the  Vds= 27V,  Vgs= -4.0V CW operating condition at  8GHz, the amplifier module exhibits a line gain of  5.6dB with a power-added efficiency of 30.5%, the output power of  40.25dBm (10.5W), and the power gain compression of  2dB. Between  8GHz and  8.5GHz, the variation of output power is  1dB.

Key words: AlGaN/GaN HEMT, solid-state power amplifier module, saturated output power, gain compression, power-added efficiency

中图分类号: 

  • TN325+.3