J4 ›› 2010, Vol. 37 ›› Issue (4): 608-612.doi: 10.3969/j.issn.1001-2400.2010.04.005

• 研究论文 • 上一篇    下一篇

双环控制单周期PFC转换器高层次模型及电路

李娅妮;杨银堂;朱樟明   

  1. (西安电子科技大学 宽禁带半导体材料与器件教育部重点实验室,陕西 西安  710071)
  • 收稿日期:2009-12-05 出版日期:2010-08-20 发布日期:2010-10-11
  • 通讯作者: 李娅妮
  • 作者简介:李娅妮(1979-),女,讲师,西安电子科技大学博士研究生,E-mail: yanili@mail.xidian.edu.cn.
  • 基金资助:

    国家自然科学基金资助项目(60725415,60971066);国家杰出青年基金资助项目(60725415)

Double-loop control one cycle PFC converter high-level model and its circuit realization

LI Ya-ni;YANG Yin-tang;ZHU Zhang-ming   

  1. (Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an  710071, China)
  • Received:2009-12-05 Online:2010-08-20 Published:2010-10-11
  • Contact: LI Ya-ni

摘要:

为简化设计过程,提高电源效率,采用Simulink拓扑结构和线性化方法,基于双环动态转移控制函数,建立了单周期、临界控制模式升压型功率因数校正转换器的高层次模型.电压环路提供低频稳定性以获得低的总谐波失真,电流环路改善高频动态特性.根据系统模型,采用Sinomos 1.0μm 40V CMOS工艺完成了功率因数校正的电路设计和验证.测试结果表明,在VDD为15V,VINV为2V, VZCD为2V的条件下,功率校正因数可达到0.988,总谐波失真为3.8%,稳定工作时电流仅为2.43mA.双环控制系统能够有效地实现单周期控制,提高系统的稳定性和动态响应速度,体现了高性能电源管理芯片的特点.

关键词: 双环控制, 功率因数校正, 单周期, 临界模式, 高层次模型

Abstract:

To simplify the design process and increase power efficiency, using Simulink's topology and linearization method, a high-level model of the one-cycle boundary controlled power factor correction (PFC) boost converter is described based on the double-loop dynamic transfer control function. The voltage loop provides low frequency stability for low total harmonic distortion(THD), and the current loop improves high frequency dynamic characteristic. According to this system model, the transistor level PFC converter is realized and verified using the Sinomos 1.0μm 40V CMOS process. Measured results show that the power factor correction is 0.988, that THD is 3.8%, and that the stable operating current is 2.43mA at the simulation of VDD=15V, VINV=2V, and VZCD=2V. The double-loop control system would achieve the one cycle control mode efficiently, and improve the system stability and dynamic response speed, which displays the high-performance characteristics of the power management chips.

Key words: double-loop control, power factor correction, one cycle, boundary mode, high-level model