MOSFET辐照损伤1/f噪声产生机制的定量鉴别方法

doi:10.3969/j.issn.1001-2400.2011.04.002

J4 ›› 2011, Vol. 38 ›› Issue (4): 6-10+48.doi: 10.3969/j.issn.1001-2400.2011.04.002

MOSFET辐照损伤1/f噪声产生机制的定量鉴别方法

李伟华¹;杜磊²;包军林¹;马中发¹

(1. 西安电子科技大学宽禁带半导体材料与器件教育部重点实验室，陕西西安 710071；
2. 西安电子科技大学技术物理学院，陕西西安 710071)

收稿日期:2010-06-09 出版日期:2011-08-20 发布日期:2011-09-28
通讯作者: 李伟华
作者简介:李伟华(1978-)，男，西安电子科技大学博士研究生，E-mail: fx2000_lwh@yahoo.com.cn．
基金资助:
国家自然科学基金资助项目(60276028)

Quantitative identification method for the ionizing radiation induced 1/f noise in MOSFETs

LI Weihua¹;DU Lei²;BAO Junlin¹;MA Zhongfa¹

(1. Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071， China;
2. School of Technical Physics, Xidian Univ., Xi'an 710071， China)

Received:2010-06-09 Online:2011-08-20 Published:2011-09-28
Contact: LI Weihua

摘要/Abstract

摘要：

用小波极大模统计参量研究了MOSFET器件辐照损伤低频噪声的时间序列．将辐照前后实验测量的低频噪声信号与数值模型产生的噪声信号统计特性相比较，发现nMOSFET和pMOSFET的低频噪声小波极大模统计结果均与随机电报噪声叠加模型数值信号的统计特性相接近．辐照前nMOSFET和pMOSFET的统计结果很接近，以致无法区分；辐照后两种器件的小波极大模分布出现明显差异．根据小波极大模统计量判断，随机电报噪声叠加是nMOSFET和pMOSFET低频噪声的主导产生机制，辐照并没有在器件中引入新的缺陷类型，而是使原有缺陷浓度增大，散射增强，辐照引起的nMOSFET损伤比pMOSFET严重．

关键词: MOSFET, 辐照损伤, 1/f噪声, 小波分析

Abstract:

Wavelet maxima statistic analysis is applied to the low frequency noise of MOSFETs before and after ionizing radiation. It is found that the wavelet maxima statistics of the low frequency noise both from nMOSFETs and pMOSFETs are similar to the numerical signal generated by RTNs superposition. The discrepancy between the wavelet maxima statistics of nMOSFETs and that of pMOSFETs is quite trivial before ionizing radiation, whereas it becomes much more evident after radiation. Based on the wavelet maxima statistics analysis, it is concluded that the dominant low frequency noise generating mechanisms in both nMOSFETs and pMOSFETs are RTNs superposition. Ionizing radiation does not add new types of defects to the devices, but increase their density. nMOSFETs is damaged more severely than pMOSFETs during radiation.

Key words: MOSFET, radiation damage, flicker noise, wavelet analysis

中图分类号:

TN386.1

李伟华;杜磊;包军林;马中发. MOSFET辐照损伤1/f噪声产生机制的定量鉴别方法[J]. J4, 2011, 38(4): 6-10+48.

LI Weihua;DU Lei;BAO Junlin;MA Zhongfa. Quantitative identification method for the ionizing radiation induced 1/f noise in MOSFETs[J]. J4, 2011, 38(4): 6-10+48.

参考文献

［1］ Esqueda I S, Barnaby H J, McLain M L, et al. Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs ［J］. IEEE Trans on Nuclear Science, 2009, 56(4): 2247-2250.
［2］花永鲜, 庄奕琪, 杜磊. MOS器件静电潜在损伤的1/f噪声检测方法［J］. 西安电子科技大学学报, 2001, 28(5): 621-625.
Hua Yongxian, Zhuang Yiqi, Du Lei. Application of 1/f Noise in Monitoring Electrostatic Latent Damage in MOS Devices ［J］. Journal of Xidian University, 2001, 28(5): 621-625.
［3］ Gaubert P, Teramoto A, Cheng W, et al. Different Mechanism to Explain the 1/f Noise in n-and p-SOI-MOS Transistors Fabricated on (110) and (100) Silicon-oriented Wafers ［J］. Journal of Vacuum Science ＆ Technology B, 2009, 27(1): 394-401.
［4］ Kuo C W, Wu S L, Chang S J, et al. Investigation of Interface Characteristics in Strained-Si nMOSFETs ［J］. Solid-State Electronics, 2009, 53(8): 897-900.
［5］陈伟华, 杜磊, 庄奕琪, 等. MOS结构电离辐射效应模型研究［J］. 物理学报, 2009, 58(6): 4090-4095.
Chen Weihua, Du Lei, Zhuang Yiqi, et al. A Model Considering the Ionizing Radiation Effects in MOS Structure ［J］. Acta Physica Sinica, 2009, 58(6): 4090-4095.
［6］ Daubechies I. Ten Lectures on Wavelets ［M］. Philadelphia: SIAM Publ, 1992.
［7］ Rehman S, Siddiqi A H. Wavelet Based Hurst Exponent and Fractal Dimensional Analysis of Saudi Climatic Dynamics ［J］. Chaos, Solitons ＆ Fractals, 2009, 40(3): 1081-1090.
［8］ Ritto P A, Alvarado-Gil J J, Contreras J G. Scaling and Wavelet-based Analyses of the Long-term Heart Rate Variability of the Eastern Oyster ［J］. Physica A, 2005, 349(1-2): 291-301.
［9］ Mallat S, Hwang W L. Singularity Detection and Processing with Wavelets ［J］. IEEE Trans on Information Theory, 1992, 38(2): 617-643.
［10］ Du Lei, Zhuang Yiqi. Singularity Comparison Between 1/f Fluctuation with Statistical Analysis of Wavelet Maxima ［J］. Physica D, 2002, 173(1-2): 52-58.
［11］包军林, 庄奕琪, 杜磊, 等. 基于虚拟仪器的电子器件低频噪声测试分析系统［J］. 仪器仪表学报, 2004, 3(增刊): 257-261.
Bao Junlin, Zhuang Yiqi, Du Lei, et al. Noise Testing and Analyzing System of Electronic Device Based on Virtual Instrumentation ［J］. Chinese Journal of Scientific Instruments, 2004, 3(S): 257-261.

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MOSFET辐照损伤1/f噪声产生机制的定量鉴别方法

Quantitative identification method for the ionizing radiation induced 1/f noise in MOSFETs

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