ALD淀积温度对HfO2高k栅介质材料特性的影响

doi:10.3969/j.issn.1001-2400.2012.02.027

J4 ›› 2012, Vol. 39 ›› Issue (2): 164-167.doi: 10.3969/j.issn.1001-2400.2012.02.027

ALD淀积温度对HfO₂高k栅介质材料特性的影响

匡潜玮;刘红侠;樊继斌;马飞;张言雷

(西安电子科技大学宽禁带半导体材料与器件教育部重点实验室，陕西西安 710071)

收稿日期:2011-01-14 出版日期:2012-04-20 发布日期:2012-05-21
通讯作者: 匡潜玮
作者简介:匡潜玮(1983-)，男，西安电子科技大学博士研究生，E-mail: kqw3606@163.com．
基金资助:
国家自然科学基金资助项目(60976068);教育部科技创新工程重大项目培育资金资助项目(708083);教育部博士点基金资助项目(200807010010)

Investigation of the influence of deposition temperature on ALD deposite HfO₂ high k gate material

KUANG Qianwei;LIU Hongxia;FAN Jiwu;MA Fei;ZHANG Yanlei

(Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071， China)

Received:2011-01-14 Online:2012-04-20 Published:2012-05-21
Contact: KUANG Qianwei

摘要/Abstract

摘要：

采用原子层淀积方法，在不同生长温度下制备了HfO₂高k栅介质薄膜，研究了生长温度对HfO₂薄膜特性的影响．实验结果表明，HfO₂薄膜的生长速率受生长温度的影响很大，在高温区将随着温度的上升而增大，而在低温区将随着温度的降低而增大．通过分析HfO₂薄膜的C-V特性发现，不同生长温度下淀积的HfO₂薄膜的介电常数和氧化层缺陷数量都有很大区别，过高和过低的生长温度都将增加HfO₂薄膜中的原生缺陷，其中，280℃~310℃区间生长的HfO₂薄膜中的缺陷最少．

关键词: 高k栅介质, 二氧化铪, 原子层淀积, 生长温度, 氧化层缺陷

Abstract:

HfO₂ high k dielectric films are deposited on Si(100) by the atomic layer deposition technique at different temperatures, and the influences of deposition temperature on the characteristic of HfO₂ are investigated. Experimental results show that the deposition rate of HfO₂ is seriously influenced by the deposition temperature, which will be rapidly increased with the increased deposition temperature in the high temperature region or the decreased temperature in the low temperature region. By analyzing the C-V characteristic of HfO₂, it is found that both the dielectric constant and the quantity of oxide defects of HfO₂deposited at different temperatures change greatly, and HfO₂ deposited at the temperature of 280-310℃ has the least oxide defects.

Key words: high k dielectric, HfO₂, ALD, deposition temperature, oxide defect

匡潜玮;刘红侠;樊继斌;马飞;张言雷. ALD淀积温度对HfO₂高k栅介质材料特性的影响[J]. J4, 2012, 39(2): 164-167.

KUANG Qianwei;LIU Hongxia;FAN Jiwu;MA Fei;ZHANG Yanlei. Investigation of the influence of deposition temperature on ALD deposite HfO₂ high k gate material[J]. J4, 2012, 39(2): 164-167.

参考文献

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[1]	刘红侠;蔡乃琼. 针对新型HfO₂栅介质改进的四元件电路模型 [J]. J4, 2008, 35(6): 1051-1055.
[2]	蔡乃琼;刘红侠. 新型HfO₂栅介质电特性的理论分析与实验研究 [J]. J4, 2008, 35(3): 513-516.

ALD淀积温度对HfO₂高k栅介质材料特性的影响

Investigation of the influence of deposition temperature on ALD deposite HfO₂ high k gate material

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