S波段六位高精度移相器设计

doi:10.3969/j.issn.1001-2400.2014.02.021

J4 ›› 2014, Vol. 41 ›› Issue (2): 125-129.doi: 10.3969/j.issn.1001-2400.2014.02.021

S波段六位高精度移相器设计

杨小峰;史江义;马佩军;郝跃

(西安电子科技大学宽禁带半导体材料与器件教育部重点实验室，陕西西安 710071)

收稿日期:2013-09-03 出版日期:2014-04-20 发布日期:2014-05-30
通讯作者: 杨小峰
作者简介:杨小峰(1982-)，男，西安电子科技大学博士研究生，E-mail:xfyang@mail.xidian.edu.cn．
基金资助:
陕西省自然科学基础研究资助项目(2010JM8015)

Design of the S band 6bits high precision phase shifter

YANG Xiaofeng;SHI Jiangyi;MA Peijun;HAO Yue

(Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071， China)

Received:2013-09-03 Online:2014-04-20 Published:2014-05-30
Contact: YANG Xiaofeng

摘要/Abstract

摘要：

采用0.25μm GaAs高电子迁移率晶体管(HEMT)工艺设计了一款六位S波段数字移相器．移相器采用高低通和全通网络结构，运用了提高相位精度和抑制级联散射的方法．移相器在0°～360°相位范围内以5.625°步进，在2.1～2.7GHz频率范围内，最小相位均方根误差仅为1.13°．频带范围内插入损耗小于6.3dB，幅度均衡小于0.4dB，输入输出反射系数小于-10dB．

关键词: 高电子迁移率晶体管, 数字移相器, 高低通, 相位精度, 级联散射抑制

Abstract:

A digital 6-bit phase shifter for S-band based 0.25μm GaAs HEMT technology is presented. The high-pass/low-pass network and all-pass network are utilized synthetically for the topology of the phase shifter, with both the phase precision improvement technique and the series scatter restrain technique adopted. The relative phase shift varies from 0 to 360 at the step of 5.625°. Over the design band of 2.1～2.7GHz, the minimum rms phase error is 1.13°, and a low insertion loss is less than 6.3dB, of which the amplitude fluctuation is less than 0.4dB and the input and output scatter parameter is less than -10dB under all conditions.

Key words: high electron mobility transistor, digital phase shifters, high-pass/low-pass network, phase precision, series scatter restrain

中图分类号:

TP391.72

杨小峰;史江义;马佩军;郝跃. S波段六位高精度移相器设计[J]. J4, 2014, 41(2): 125-129.

YANG Xiaofeng;SHI Jiangyi;MA Peijun;HAO Yue. Design of the S band 6bits high precision phase shifter[J]. J4, 2014, 41(2): 125-129.

参考文献

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S波段六位高精度移相器设计

Design of the S band 6bits high precision phase shifter

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