西安电子科技大学学报

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InAlAs/InGaAs/InAlAs量子阱质子辐照损伤机理

王海丽1;吉慧芳1;孙树祥1;丁芃2;金智2;魏志超3;钟英辉1;李玉晓1   

  1. (1. 郑州大学 物理工程学院,河南 郑州 450001;
    2. 中国科学院 微电子研究所,北京 100029;
    3. 中国空间技术研究院,北京 100086)
  • 收稿日期:2016-08-19 出版日期:2017-08-20 发布日期:2017-09-29
  • 通讯作者: 钟英辉(1987-),女,讲师,E-mail:zhongyinghui@zzu.edu.cn
  • 作者简介:王海丽(1992-),女,郑州大学硕士研究生,E-mail:yunjianghuahe5@163.com
  • 基金资助:

    国家自然科学基金资助项目(61404115, 61434006, 11475256)

Proton irradiation damage mechanism of the InAlAs/InGaAs/InAlAs quantum well

WANG Haili1;JI Huifang1;SUN Shuxiang1;DING Peng2;JIN Zhi2;WEI Zhichao3;ZHONG Yinghui1;LI Yuxiao1   

  1. (1. School of Physics and Engineering, Zhengzhou Univ., Zhengzhou 450001, China;
    2. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    3. China Academy of Space Technology, Beijing 100086, China)
  • Received:2016-08-19 Online:2017-08-20 Published:2017-09-29

摘要:

对InP基高电子迁移率场效晶体管关键的InAlAs/InGaAs/InAlAs量子阱结构质子辐照损伤机理进行了研究.基于SRIM软件计算了50keV、75keV和200keV质子在量子阱中的投影射程和诱生空位缺陷信息.随着质子能量增加,质子注入深度逐渐增加并最终逃逸出材料层.另外,在异质结附近诱生的空位缺陷个数先增加后减小,且As空位为主要的诱生缺陷.基于解析模型计算了不同能量质子入射下In0.52Al0.48As和In0.53Ga0.47As材料的非电离能量损失.随着质子能量增加,非电离能量损失先增加后减小,与辐照诱生缺陷密度随能量的变化趋势一致.最后通过辐照陷阱模型验证了诱生缺陷作为受主补偿中心对量子阱二维电子气的俘获作用,确定了非电离能量损失诱生空位缺陷为质子辐照主要的损伤机制.

关键词: 高电子迁移率晶体管, 质子辐照, 空位缺陷, 非电离能量损失

Abstract:

InP-based high electron mobility transistors (HEMT) have shown a great potential for national defense and satellite radar in space radiation environment applications. This paper studies the proton radiation damage mechanism of its critical structure InAlAs/InGaAs/InAlAs quantum well. The proton projection range and vacancy defect information are obtained at different incident proton energies of 50keV, 75keV and 200keV by SRIM software. With the increase of proton energy, the proton injection depth is increasing and eventually protons pass through the material layers. Besides, the proton radiation induced vacancy defects numbers around hetero-junction increase first and decrease subsequently, and As vacancies are the main proton radiation induced defects. In addition, non-ionizing energy loss (NIEL) of In0.52Al0.48As and In0.53Ga0.47As material is computed under different incident proton energies by the analytical model. The change trend of NIEL is identical to the induced vacancy numbers, namely, NIEL first increases and then decreases as the incident proton energy increases. Finally the degrading effect of the radiation-induced As defect is detected in the two-dimensional electron gas in the quantum well, which confirms that the major proton radiation damage mechanism of the quantum well is the induced vacancy defects by NIEL.

Key words: high electron mobility transistor, proton radiation, vacancy defects, non-ionizing energy loss