关键词: 多级存储单元, 低密度奇偶校验码, 单元间干扰, 比特翻转译码

Abstract:

As the bit storage density of the multi-level cell (MLC) for flash memory increases, cell-to-cell interference is the dominant distortion source of the flash memory. By making a thorough analysis of the error characteristics of the intra-cell bit storage channel, a bit-flipping (BF) rule for the MLC flash memory is designed, and an improved BF algorithm is presented for the MLC flash memory. Simulation results show that the decoding performance of the improved bit-flipping algorithm is better than that of the BF decoding algorithm for the MLC flash memory with the same sensing precision, and the improved BF decoding algorithm for the MLC flash memory can effectively reduce the average number of iterations, which can achieve a better tradeoff between decoding complexity and decoding performance.

Key words: multi-level cell, low-density parity-check codes, cell-to-cell interference, bit-flipping decoding