一种SiGe BiCMOS宽带低噪声放大器设计

doi:10.19665/j.issn1001-2400.2022.06.007

摘要/Abstract

摘要：

为满足宽频带射频通信接收前端低噪声放大器的设计需求,提出一种基于共发射极密勒电容的宽带匹配结构。该结构利用异质结双极性晶体管的密勒电容,将负载纳入输入匹配网络进行设计,从而实现宽带输入匹配。该结构在实现良好的低噪声性能的同时,能够有效拓展放大器的工作频带。基于0.13 μm SiGe BiCMOS工艺,设计了一款宽带低噪声放大器,电路采用三级级联结构,首级采用密勒电容宽带匹配结构,可降低噪声并实现输入宽带匹配,后两级采用共基共射结构用于补偿增益。仿真结果表明,在6~30 GHz 频带内,低噪声放大器的增益为16.5~19.1 dB,噪声系数为1.43~2.66 dB,输入反射系数S₁₁小于-11.9 dB,输出反射系数S₂₂小于-13.7 dB。放大器在整个频段内无条件稳定。在1.8 V供电电压下电路的直流功耗为38.7 mW,整体芯片面积为0.88 mm²。该低噪声放大器综合性能优良,可应用于宽带接收系统。

关键词: 宽带低噪声放大器, SiGe BiCMOS, 噪声, 阻抗匹配

Abstract:

To meet the design requirements of a low noise amplifier in the receiving front-end of broadband radio frequency communication,a new broadband matching structure of a miller capacitor based on the common emitter stage is proposed.The structure uses the miller capacitance of the heterojunction bipolar transistor,with the load incorporated into the input matching network for design,so as to realize broadband input matching.The structure achieves a sufficiently good low-noise performance.At the same time,it can effectively expand the working frequency band of the amplifier.A broadband low noise amplifier using a 0.13 μm SiGe BiCMOS process is designed.The circuit of the amplifier consists of three amplifiers,with the first stage adopting the Miller capacitor broadband matching structure to reduce noise and realize broadband matching and the latter two stages adopting the common base cascode structure to compensate for the gain.Simulation results show that in the 6~30 GHz band,the gain of the low noise amplifier is 16.5~19.1 dB,the noise figure is 1.43~2.66 dB,the input reflection coefficient S11 is less than -11.9 dB,and the output reflection coefficient S22 is less than -13.7 dB,and that the amplifier is unconditionally stable in the whole frequency band.The DC power consumption of the circuit is 38.7 mW at 1.8 V supply voltage.The overall chip area is 0.88 mm2.The amplifier has a desired comprehensive performance and can be used in a broadband receiving system.

Key words: broadband low noise amplifier, SiGe BiCMOS, noise, impedance matching

中图分类号:

TN432

郭斐,梁煜,张为,杨雪. 一种SiGe BiCMOS宽带低噪声放大器设计[J]. 西安电子科技大学学报, 2022, 49(6): 51-57.

GUO Fei,LIANG Yu,ZHANG Wei,YANG Xue. Design of a SiGe BiCMOS broadband low noise amplifier[J]. Journal of Xidian University, 2022, 49(6): 51-57.

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文中设计与其他文献性能对比"

参数	文献[16]	文献[17]	文献[18]^*	文献[19]	文中^*
工艺	0.13 μm SiGe	0.13 μm SiGe	0.13 μm SiGe	0.13 μm SiGe	0.13 μm SiGe
带宽/GHz	8~20	2~20	6~18	3~26	6~30
增益/dB	8.0~19.0	17.6~18.0	15.7~16.3	9.5~10.6	16.5~19.1
带内增益起伏/dB	11.0	0.4	1.6	1.1	2.6
R_NF/dB	1.30~3.00	2.60~2.90	2.70~3.80	4.30~4.90	1.46~2.66
回波损耗/dB	S₁₁<-10.0 S₂₂<-10.0	S₁₁<-10.0 S₂₂<-10.0	S₁₁<-16.4 S₂₂<-14.9	S₁₁<-15.0 S₂₂<-9.0	S₁₁<-11.9.0 S₂₂<-13.7
IP_1dB/dBm	-7.5	-14.2	-4.8	-5.6	-25.6
功耗/mW	49.0	55.0	32.0	33.0	38.7
面积/mm²	0.690	0.515	1.288	0.480	0.880
$R F o M * *$	3.01	3.32	1.84	1.94	10.03

表1

参考文献 20

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