应变Si/(101)Si<sub>x</sub>Ge<sub>1-x</sub>空穴迁移率

应变Si/(101)Si_xGe_1-x空穴迁移率

赵丽霞;张鹤鸣;戴显英;宣荣喜

Hole mobility of strained Si/(101)Si_xGe_1-x

ZHAO Lixia;ZHANG Heming;DAI Xianying;XUAN Rongxi

J4 . 2013, (3): 121 -125 . DOI: 10.3969/j.issn.1001-2400.2013.03.018