漏极接触孔到栅间距对GGNMOS保护器件的影响

吴晓鹏;杨银堂;董刚;高海霞

Influence of drain contact to gate space on the characteristic of the GGNMOS protection device

WU Xiaopeng;YANG Yintang;DONG Gang;GAO Haixia

J4 . 2014, (4): 26 -30 . DOI: 10.3969/j.issn.1001-2400.2014.04.005