沟道尺寸对深亚微米GGNMOS保护器件特性的影响
吴晓鹏;杨银堂;刘海霞;董刚
Research on the influence of the channel dimension on the characteristics of the gate grounded NMOS protection device
WU Xiaopeng;YANG Yintang;LIU Haixia;DONG Gang
J4
.
2015, (6): 113
-117
.
DOI: 10.3969/j.issn.1001-2400.2015.06.020
