Abstract: Based on the relevant models of 6H-SiC material and devices, the temperature properties of the submicron 6H-SiC CMOS inverter proposed in this paper are investigated with the 2-Dimentional device simulator MEDICI. Simulation results show that the inverter can operate at 600K and has better voltage transfer and transient characteristics. The calculated switching threshold voltage of the inverter varies from 1.218V to 1.274V in the temperature range of 300~600K with a 5V power supply and its change is not significant. All this provides a valuable reference for the design of and the research on more complicated high temperature 6H-SiC CMOS circuits.

Key words: 6H-SiC, CMOS inverter, temperature properties, voltage transfer, switching threshold voltage