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Estimation of yield associated with elliptical defect

WANG Jun-ping(1,2);HAO Yue(1);ZHANG Zhuo-kui(3);Ren Chun-li(3);LI Kang(1);FANG Jian-ping(1)

(1) Ministry of Edu. Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi′an 710071， China
(2) School of Telecommunication Engineering, Xidian Univ., Xi′an 710071， China
(3) School of Science, Xidian Univ., Xi′an 710071， China

Received:1900-01-01 Revised:1900-01-01 Online:2006-06-20 Published:2006-06-20

Abstract

Abstract: In integrated circuits, the defects associated with photolithography are assumed to be the shape of circular
discs in order to perform the estimation of yield and fault analysis. However, the shape of 70% real defects approximates
elliptical shapes. This paper provides a yield model caused by elliptical defects. The model is more general than that of the
circular defect as the model is only an instance of the new model. A comparison result between the two models in experiment
shows that the new model may predict the yield caused by real defects more accurately than the circular model does, which is
of significance for the prediction and improvement of the yield.

Key words: keywords

CLC Number:

TN43

WANG Jun-ping(1;2);HAO Yue(1);ZHANG Zhuo-kui(3);Ren Chun-li(3);LI Kang(1);FANG Jian-ping(1).

Estimation of yield associated with elliptical defect

[J].J4, 2006, 33(3): 433-437.

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Estimation of yield associated with elliptical defect

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