Abstract: The analytical model which comprises the temperature compensation for the SiC MOSFET is modified by considering the Gauss model of interface state density and the Poole-Frenkel effect. The simulation results for the 6H-SiC NMOS and PMOS show that as the non-uniformity distribution of interface state density, the percentage of current change due to the threshold voltage becomes smaller when the temperature is increased; the main reason for the large leakage current is the existence of surface defects. The larger the defect density, the more rapidly the current value increases with the temperature.

Key words: SiC, compensating current elements, freeze-out effect, Poole-Frenkel effect, body leakage current