纳米MOS器件RTS噪声测量与分析

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Measurement and analysis of RTS noise in nano-MOS devices

ZHANG Peng;ZHUANG Yi-qi;BAO Li;MA Zhong-fa;BAO Jun-lin;LI Wei-hua

(Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi’an 710071， China)

Received:2008-02-29 Revised:1900-01-01 Online:2008-12-20 Published:2008-12-20
Contact: ZHANG Peng E-mail:pengzhangzp@163.com

Abstract

Abstract: A virtual-instrument based measurement and analysis method for RTS noise in nano-MOS devices is presented. After a systematic computation of both difference analysis and Gaussian function fitting, and digital filtering and exponential function fitting, the relative amplitudes and time constants of RTS noise are obtained, respectively. Verified by experimental characterization of RTS noise in 90nm MOSFETs, this new method not only manifests higher efficiency, but also needs just 1/10 sample points of the traditional method under the same requirements of measuring precision.

Key words: RTS noise, noise measurement, virtual-instrument, nano-MOS devices

CLC Number:

TN386

ZHANG Peng;ZHUANG Yi-qi;BAO Li;MA Zhong-fa;BAO Jun-lin;LI Wei-hua. Measurement and analysis of RTS noise in nano-MOS devices
[J].J4, 2008, 35(6): 1041-1045.

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Measurement and analysis of RTS noise in nano-MOS devices

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