N型Ni基SiC欧姆接触比接触电阻的精确求解

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Accurate calculation of the specific contact resistance for Ni based Ohmic Contacts to the N-type SiC

GUO Hui;ZHANG Yi-men;ZHANG Yu-ming;TANG Xiao-yan;FENG Qian

(Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi’an 710071， China)

Received:2007-09-24 Revised:1900-01-01 Online:2008-10-20 Published:2008-09-12
Contact: GUO Hui E-mail:guohui@mail.xidian.edu.cn

Abstract

Abstract: The specific contact resistance of ohmic contact is deduced accurately based on the electron tunneling probabilities through the triangular barrier to be solved by the one-dimensional time-independent Schrdinger equation. The experimental results of Ni based ohmic contacts on the N-type SiC are compared with that of the simulation. The proposed method has the advantages over the WKB approximation of better accuracy and adaptation to SiC ohmic contacts.

Key words: SiC, ohmic contact, specific contact resistance, direct tunneling, WKB approximation

CLC Number:

TN405

GUO Hui;ZHANG Yi-men;ZHANG Yu-ming;TANG Xiao-yan;FENG Qian. Accurate calculation of the specific contact resistance for Ni based Ohmic Contacts to the N-type SiC
[J].J4, 2008, 35(5): 842-845.

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Accurate calculation of the specific contact resistance for Ni based Ohmic Contacts to the N-type SiC

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