基极注入HPM导致的双极型晶体管失效分析

doi:10.3969/j.issn.1001-2400.2014.01.017

J4 ›› 2014, Vol. 41 ›› Issue (1): 92-97.doi: 10.3969/j.issn.1001-2400.2014.01.017

• Original Articles • Previous Articles Next Articles

Mechanism analysis and physical process of bipolar junction transistor failure due to HPM injection from the base

FAN Juping^1,2;YOU Hailong^1,2;JIA Xinzhang^1,2

(1. School of Microelectronic, Xidian Univ., Xi'an 710071， China;
2. Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071， China)

Received:2013-05-13 Online:2014-02-20 Published:2014-04-02
Contact: FAN Juping E-mail:13572180798@163.com

Abstract

Abstract:

In order to determine the influence of HPM on BJT, the physical process and model are proposed based on the experimental phenomena of BJT injecting HPM from the base. Simulation results by using the model and process proposed in the paper show that the main mechanism of failure and degradation of BJT caused by HPM is that the induced voltage pulse generated by HPM leads to the burn-up and the formation of the fuse element and defect in the base. The burnt area and the number of defects which vary with the power and time of HPM on the devices cause the device failure and the change of DC characteristics.The simulation result is in good agreement with the phenomena of the BJT HPM effect experiment, which indicates that the analysis in this paper is correct.

Key words: high power microwave, bipolar junction transistors, DC characteristics, burn area

FAN Juping;YOU Hailong;JIA Xinzhang. Mechanism analysis and physical process of bipolar junction transistor failure due to HPM injection from the base[J].J4, 2014, 41(1): 92-97.

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Mechanism analysis and physical process of bipolar junction transistor failure due to HPM injection from the base

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