A technology for protection from latch-up based on current rejetion by LDO
J4
• Original Articles • Previous Articles Next Articles
ZHANG Gong-wei1,2;JIANG Xuan-xiang2;TANG Xue-han2;HAO Yue1
Received:
Revised:
Online:
Published:
Abstract: This paper discusses the similarities and differences between the latch-up induced by electrics and the latch-up induced by radiation for CMOS IC's. A technical scheme for Latch-up protection based on current rejection by a low-dropout linear voltage regulator(LDO) is developed, with the onboard experimental result and the experimental data of TDO on ground of the LDO circuit used on the satellite given. Finally, the problem of protection and recovery from latch-up on the onboard-computer has been solved.
Key words: onboard computer, space radiation, protection from latch-up, linear voltage regulator
CLC Number:
ZHANG Gong-wei1;2;JIANG Xuan-xiang2;TANG Xue-han2;HAO Yue1.
0 / / Recommend
Add to citation manager EndNote|Reference Manager|ProCite|BibTeX|RefWorks
URL: https://journal.xidian.edu.cn/xdxb/EN/
https://journal.xidian.edu.cn/xdxb/EN/Y2004/V31/I4/565
Cited