Abstract: New requirements are presente
d to interconnection integration technology because of the decreasing feature di
mension in VLSI devices. As a new interconnecting material, Cu can reduce the de
la
y of interconnection effectively and improve interconnecting performance. In thi
s paper, the Damascene Cu interconnecting integration technology, low-k die
lectric materials and barrier materials in Cu interconnecting integration techno
logy are introduced. It is believed that the barrier ability and reliability of
Cu interconnecting technology can be highly improved when the angle of via is 20
° and the barrier material is Ta.

Key words: Cu interconnection technology, low k dielectric materials, process reliabilities