Abstract: A novel SiGe CMOS stucture is proposed. MEDICI was used to simulate the relations between the electrical parameters of teh SiGe CMOS structure and its geometrical and physical parameters. According to the results of the MEDICI simulation, the effects of the main factors which include Ge contents in the strained and relaxed SiGe layes, and the thickness of Si cap layer on the electrical performance of the SiGe CMOS structure are discussed and analyzed. The transport performance of a SiGe CMOS inverter is simulated with MEDICI and the delay time is 3ps.

Key words: SiGe CMOS, structure simulation, electrical characteristics