Journal of Xidian University ›› 2021, Vol. 48 ›› Issue (3): 49-55.doi: 10.19665/j.issn1001-2400.2021.03.006

• Information and Communications Engineering & Mechanical Engineering • Previous Articles     Next Articles

Permutation codesable to correct stable and unstable burst erasure errors

HE Yaping1(),HE Yucheng1,2(),ZHOU Lin1,2()   

  1. 1. Xiamen Key Laboratory of Mobile Multimedia Communications,Huaqiao Univesity,Xiamen 361021,China
    2. State Key Laboratory of Integrated Services Networks,Xidian Univesity,Xi’an 710071,China
  • Received:2020-12-14 Online:2021-06-20 Published:2021-07-05
  • Contact: Yucheng HE E-mail:yaping_he@hqu.edu.cn;yucheng.he@hqu.edu.cn;linzhou@hqu.edu.cn

Abstract:

In order to improve the reliability of flash memories,permutation is used to represent the rank modulation scheme of the flash cell charge.Error-correcting codes based on permutation groups can correct a variety of special error types that are caused by the rank modulation scheme.When a flash memory cell is damaged and the stored charge value cannot be read correctly,an erase error or a delete error may occur in the corresponding position.Aiming at the problem of the stability of burst erasure errors in rank modulation of the flash memory,a new construction of permutation codes combined with the permutation interleaving technique is proposed by the existing Levenshtein permutation code that can correct a single deletion error.The proposed construction can correct a single stable burst erasure and a single unstable burst erasure,respectively.Two corresponding decoding methods are presented in the proof of the proposed construction.The code construction and the decoding methods are validated with examples.

Key words: permutation code, flash memory, rank modulation, burst erasure errors

CLC Number: 

  • TN911.22