沟道尺寸对深亚微米GGNMOS保护器件特性的影响

doi:10.3969/j.issn.1001-2400.2015.06.020

Abstract

Abstract:

The effect of the channel width and channel length on the single finger GGNMOS ESD protection device based on the deep sub-micron technology is researched, which gives the insight into the selection of the optimum value for the channel. The I-V characteristic of the protection device with various layout parameters results from the tapeout based on the SMIC 018μm CMOS process and the TLP test. The physics mechnism is detailed based on the variation tendency of the failure current level and the device simulation. The results show that the selection of the channel width should consider the on-off uniformity and that the channel length affects the robustness of the protection device by changing the heat distribution under the channel. This paper analyzes the physical mechnism of the effcts of the channel dimension on the single finger GGNMOS protection device and gives the guidauce for the optimum layout design of the deep sub-micron ESD protection devices.

Key words: channel width, channel length, electrostatic discharge, gate grounded negative channel metal oxide semiconductor

WU Xiaopeng;YANG Yintang;LIU Haixia;DONG Gang. Research on the influence of the channel dimension on the characteristics of the gate grounded NMOS protection device[J].J4, 2015, 42(6): 113-117.

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Research on the influence of the channel dimension on the characteristics of the gate grounded NMOS protection device

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