Abstract: Based on a new majority carrier mobility model of the strained Si_1-xGe_x material, the relation between resistivity and doping concentrations with different Ge compositions has been obtained. With this relation, the doping concentration in strained Si_1-xGe_x can be measured by using a collinear four-probe array. The characterization technique is compatible with the on-line measure of the doping concentration in Si but much simpler and more convenient.

Key words: Si_1-xGe_x material, mobility model, resistivity, doping concentration, four-probe array