Abstract: A new CVD technique, called UVCVD/UHVCVD, is developed for SiGe HBT materials. The technique is characterized by its low temperature and ultrahigh vacuum. The device-quality SiGe materials are grown by UVCVD/UHVCVD under an ultrahigh vacumm of 10^-7Pa at a low temperature of 450℃. The result of SIMS shows that the interfaces are distinct and the rising and falling edges are steep. Furthermore, the SiGe HBT device based on the materials is developed.

Key words: SiGe material, UVCVD, UHVCVD, SiGe HBT