Abstract: AlGaN/GaN HEMTs grown on sapphire substrates with 1μm gate-length have been fabricated. These devices exhibit the peak extrinsic Transconductance of 160mS/mm and the saturation drain current density 720?mA/mm at 1V and the breakdown voltage above 50V. Ideal Source-drain current-voltage characteristics and Schottky characteristics of AlGaN/GaN HEMT are revealed at RT. Based on the analysis of the effect of some key processes on characteristics. The methods and directions in improving the performances of these devices are proposed in this paper.

Key words: microwave power device, AlGaN/GaN, HEMT