一种新型内置频率补偿的LDO调整器设计

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A novel LDO regulator design with internal frequency compensation

XIAO Jian1;MO Liang-hua2; LIU Yuan-cheng2;ZHANG Fu-jia1

(1. Institute of Microelectronics, Lanzhou University, Lanzhou, 730000, China;
2. EDA Key Lab. , Research Institute of Tsinghua University in Shenzhen, 518057, China)

Received:1900-01-01 Revised:1900-01-01 Online:2007-09-20 Published:2007-09-20

Abstract

Abstract: A CMOS low Dropout Regulator based on a novel frequency compensation technique with a low equivalent series resistance(ESR) output capacitor is presented. An internal frequency compensation circuit is used to solve the stability and to facilitate the use of multilayer ceramic capacitors for the load of LDO regulators, thus improving transient response and reducing the cost greatly. Test result from a prototype fabricated by SMIC 0.35μm technology proves the feasibility of this method, with the measured output overshoot voltage of less than 20mV when the load cureent steps from 1mA to 100mA.

Key words: LDO, regulator, frequency compensation, stability, multilayer ceramic capacitors

CLC Number:

TN732

XIAO Jian1;MO Liang-hua2; LIU Yuan-cheng2;ZHANG Fu-jia1. A novel LDO regulator design with internal frequency compensation
[J].J4, 2007, 34(7): 181-184.

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A novel LDO regulator design with internal frequency compensation

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