J4 ›› 2011, Vol. 38 ›› Issue (5): 147-151.doi: 10.3969/j.issn.1001-2400.2011.05.024

• Original Articles • Previous Articles     Next Articles

Multiple sub-bands analytical model of 2DEG properties in the AlxGa1-xN/GaN heterostructure

LIU Hongxia;LU Fengming;WANG Yonghuai;SONG Dajian;WU Yi   

  1. (Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an  710071, China)
  • Received:2010-08-27 Online:2011-10-20 Published:2012-01-14
  • Contact: LIU Hongxia E-mail:hxliu@mail.xidian.edu.cn

Abstract:

To analyze a nitride heterostructure using a simple method, an analytic model is developed for the AlGaN/GaN heterostructure to study two-dimensional electron gas (2DEG) properties. The model is analytical for the energy band, sub-band level and wave function of 2DEG. A comparison of analytical results with complex self-consistent results of the Poisson-Schrodinger equation shows that the complicated numerical calculation and the disadvantage of time-consuming are avoided. We can obtain the variety of 2DEG distribution and sheet density and the shape of the potential well with Al content and thickness of the AlGaN barrier layer using the analytic model.

Key words: AlGaN/GaN heterostructure, two-dimensional electron gas, multiple sub-bands model, distribution of energy level