一种碳化硅外延层质量评估新技术

doi:10.3969/j.issn.1001-2400.2011.06.006

Abstract

Abstract:

Considering that many characterization techniques used to evaluate the quality properties of the Silicon Carbide (SiC) epilayer result in high cost, long time, easy damage and being unable to carry out on-line test, the Infrared Specular Reflection (IRSR) Spectroscopy, Raman Scattering (RS) Spectroscopy, X-Ray Diffraction (XRD), Atom Force Microscopy(AFM) and X-ray Photoelectron energy Spectroscopy (XPS) are used to study the quality test of the 4H-SiC wafer. Results show that the IRSR spectrum can provide not only the quality parameters offered by RS, XRD, AFM and XPS but also agree with the comprehensive results from them. It is demonstrated that ISRS can be used as a low cost, rapid, non-destructive and on-line monitoring technique for the quality control of the SiC epilayer.

Key words: SiC, epilayer, quality evaluation, infrared specular reflection spectroscopy

CLC Number:

O472+3

MA Gelin;ZHANG Yuming;ZHANG Yimen;MA Zhongfa. New quality evaluation technique for the SiC epilayer[J].J4, 2011, 38(6): 37-43+96.

References

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New quality evaluation technique for the SiC epilayer

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