光伏型InSb红外探测器瞬态特性界面陷阱效应

doi:10.3969/j.issn.1001-2400.2017.03.011

Abstract

Abstract:

The transient characteristics can be significantly affected by the interface trap. In order to reveal the intrinsic mechanism and provide some references for the design of detectors, the interface trap effect on the transient characteristics of a back-illuminated photovoltaic InSb infrared detector is studied with two-dimensional simulations. The relationships between interface traps and some key physical parameters, such as the hole concentration, the recombination rate and the electric field, are analyzed to reveal the intrinsic mechanisms of the influence of the interface traps on the transient characteristics. Studies show that with the increase of the interface trap density, the recombination rate and the electric field near the interface increase, the hole concentration decreases, and the “black holes” in current density distribution appear and move forward to the pn junction. And the transient photoresponse decreases with the increase of the interface trap density.

Key words: InSb, interface traps, transient characteristic, photovoltaic infrared detector

CHEN Xiaodong;YANG Cui;XIANG Pei;LIU Peng;SHAO Xiaopeng;ZHANG Xiaolei;LV Yanqiu. Interface trap effect on the transient characteristics of a photovoltaic InSb infrared detector[J].Journal of Xidian University, 2017, 44(3): 61-65+88.

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Interface trap effect on the transient characteristics of a photovoltaic InSb infrared detector

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