绝缘层上单轴应变硅的应力计算与分析

doi:10.3969/j.issn.1001-2400.2018.01.029

Abstract

Abstract:

In order to study the wafer level uniaxial strained silicon insulation layer on the stress distribution and variation trend, a uniaxial strained SOI wafer is successfully fabricated by annealing in SOI mechanical bending at the wafer level, with the advantages of low cost and simple process. On this basis, the stress of mechanical induced uniaxially strained SOI wafers in various directions under different bending radii is simulated with ANSYS, and the results show that the stress along the bending direction, which is suitable for the channel of the COMS device, is much larger than that perpendicular to the bending direction. Also, the stress significantly increases and the uniformity of the stress distribution decreases with the decrease of bending radii. The stress distribution of the uniaxially strained SOI obtained by the optical fiber grating measurement is in good agreement with the ANSYS simulation results.

Key words: mechanical bending annealing, wafer level uniaxial strain, silicon on insulator, stress distribution, finite element analysis

MIAO Dongming;DAI Xianying;WU Shujing;ZHAO Tianlong;SHAO Chenfeng;HAO Yue. Stress calculation and analysis of uniaxially strained silicon on the insulator[J].Journal of Xidian University, 2018, 45(1): 162-167.

References

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Stress calculation and analysis of uniaxially strained silicon on the insulator

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