一种高精度低温漂带隙基准电路的设计与实现

doi:10.19665/j.issn1001-2400.2019.02.008

Abstract

Abstract:

A novel bandgap reference circuit with a low temperature coefficient is presented, which compensates the voltage slightly and optimizes the temperature characteristic by setting up a subsection compensation circuit. The circuit and its layout have been done by the 3μm 18V Bipolar process in the No.771 Institute. Simulation and fabrication results show that the temperature coefficient of the voltage reference is 1.7×10 ^-6~6.0×10 ^-6/℃ at -55℃~125℃ under the condition of the 2.2V wide input voltage range, and that the circuit possesses the power supply rejected characteristic of 0.03 mV/V. This circuit and its layout have been successfully applied to a low-dropout regulator.

Key words: bandgap reference, subsection temperature compensation, high-order temperature characteristic

CLC Number:

TN431

LIU Xiaoxuan,ZHANG Yuming,JI Qingzhou,CAO Tianjiao. Design and realization of a high-precision and low temperature drift reference circuit[J].Journal of Xidian University, 2019, 46(2): 41-46.

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测试参数	1#	2#	3#
最大电压/V	1.20239	1.20095	1.20055
最小电压/V	1.20147	1.20045	1.19997
平均电压/V	1.20189	1.20077	1.20027
温度系数/℃^-1	4.25254×10^-6	2.32177×10^-6	2.684572×10^-6

性能参数	文献[1]	文献[3]	文献[6]	文中
工艺/μm	0.80(BiCMOS)	0.35(BiCMOS)	0.18(BiCMOS)	3.00(Bipolar)
基准电压/V	1.167	1.207	1.240	1.200
电源电压/V	5.0	3.3	1.8	3.3
温度系数/℃^-1	5.98×10^-6(仿真)	2.2×10^-6(仿真)	34.6×10^-6(仿真)	1.7×10^-6~6.0×10^-6(实测)
工作温度/℃	-50~150	-25~80	-30~100	-50~125

Design and realization of a high-precision and low temperature drift reference circuit

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