基于自对准和空气桥工艺的SiGe HBT研究

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Study of the SiGe HBT based on the self-alignment and air-bridge

LIU Dao-guang1,2,3;HAO Yue1;XU Shi-liu2,3;LI Kai-cheng2,3;LIU Yu-kui2,3;LIU Rong-kan2,3;ZHANG Jing2,3;HU Hui-yong1 LI Pei-xian1;ZHANG Xiao-ju1;XU Xue-liang2,3

(1. Research Inst. of Microelectronics, Xidian Univ., Xi′an 710071， China; 2. National Lab. of Analog Integrated Circuits, Chongqing 400060， China; 3. China Electronics Technology Group Corporation, Sichuan Inst. of Solid-state Circuits, Chongqing 400060， China)

Received:1900-01-01 Revised:1900-01-01 Online:2005-06-20 Published:2005-06-20

Abstract

CLC Number:

TN405

LIU Dao-guang1;2;3;HAO Yue1;XU Shi-liu2;3;LI Kai-cheng2;3;LIU Yu-kui2;3;LIU Rong-kan2;3;ZHANG Jing2;3;HU Hui-yong1 LI Pei-xian1;ZHANG Xiao-ju1;XU Xue-liang2;3.

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Study of the SiGe HBT based on the self-alignment and air-bridge

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