X 波段单级氮化镓固态放大器

Abstract

Abstract:

Based on the self-developed AlGaN/GaN HEMT with 2.5-mm gate width technology on the SiC substrate, the X-band GaN solid-state power amplifier module is fabricated. The module consists of the AlGaN/GaN HEMT, DC-bias circuit and microstrip line. The chamber structure made of metal and the test fixture are designed for grounding and thermal transmission under the CW operating condition. Two section bias circuits for the AlGaN/GaN HEMT are presented. The special R-C networks and gate resistance are used for cancellation of self-oscillation at both the low frequency and radio frequency. The microstrip stubs are used for input matching and output matching. Under the V_ds= 27V, V_gs= -4.0V CW operating condition at 8GHz, the amplifier module exhibits a line gain of 5.6dB with a power-added efficiency of 30.5％, the output power of 40.25dBm (10.5W), and the power gain compression of 2dB. Between 8GHz and 8.5GHz, the variation of output power is 1dB.

Key words: AlGaN/GaN HEMT, solid-state power amplifier module, saturated output power, gain compression, power-added efficiency

CLC Number:

TN325+.3

CHEN Chi;HAO Yue;FENG Hui;MA Xiao-hua;ZHANG Jin-cheng;HU Shi-gang. X-band single stage GaN solid-state power amplifier[J].J4, 2009, 36(6): 1039-1043.

References

［1］Trew R J, Bilbro G L, Kuang W, et al. Microwave AlGaN GaN HFETs［J］. IEEE Microwave Magazine, 2005, 6(1): 56-66.
［2］Wu Y F, Saxler A, Moore M, et al. 30-W mm GaN HEMTs by Field Plate Optimization ［J］. IEEE Electron Device Letters, 2004, 25(3): 117-119.
［3］Takagi K, Masuda K, Kashiwabara Y, et al. X-band AlGaN GaN HEMT with over 80W Output Power ［C］//Compound Semiconductor Integrated Circuit Symposium. San Antonio: IEEE, 2006: 265-268.
［4］Meliani C, Behtash R, Wurfl J, et al. A Broadband GaN-MMIC Power Amplifier for L to X Bands ［C］//Microwave Integrated Circuit Conference 2007. European: IEEE, 2007: 147-150
［5］Piotrowicz S, Morvan E, Aubry R, et al. State of the Art 58W, 38％ PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers［C］//Compound Semiconductor Integrated Circuits Symposium 2008. Monterey: IEEE, 2008: 1-4
［6］刘果果, 郑英奎, 魏珂, 等. 8W AlGaN/GaN HEMT功率器件的研制［J］. 半导体学报, 2008, 29(7): 1354-1356.
Liu Guoguo, Zheng Yingkui, Wei Ke, et al. An 8W X Band AlGaN/GaN Power HEMT ［J］. Journal of Semiconductors, 2008, 29(7): 1354-1356.
［7］王勇, 李静强, 张志国, 等. X波段GaNHEMT内匹配器件［J］. 半导体学报, 2008, 29(9): 1783-1785.
Wang Yong, LiJingqing, Zhang Zhiguo, et al. X-Band Internally-Matched GaN HEMTs ［J］. Journal of Semiconductors, 2008, 29(9): 1783-1785.
［8］陈堂胜, 张斌, 任春江, 等. 14W X波段AlGaN/GaN HEMT功率MMIC［J］. 半导体学报, 2008, 29(6): 1027-1030.
Chen Tangsheng, Zhang Bin, Ren Chunjiang, et al. 14W X-Band AlGaN/GaN HEMT Power MMICs ［J］. Journal of Semiconductors, 2008, 29(6): 1027-1030.
［9］陈小群, 郭玉春, 史小为. OFDM 系统高效Dpherty 功率放大器设计［J］. 西安电子科技大学学报, 2008, 32(6): 1020-1025.
Chen Xiaoqun, Guo Yuchun, Shi Xiaowei. Design of a Highly Efficient Doherty Power Amplifier for the OFDM System［J］. Journal of Xidian University, 2008, 32(6): 1020-1025.
［10］Kanto K, Satomi A, Asahi Y, et al. An X-band 250W Solid-state Power Amplifier Using GaN Power HEMTs ［C］//Radio and Wireless Symposium. Orlando: IEEE, 2008: 77-80.
［11］岳远征, 郝跃, 张进城, 等. AlGaN/GaN HEMTs 表面钝化抑制电流崩塌的机理研究［J］. 西安电子科技大学学报, 2008, 35(1): 125-128.
Yue Yuanzheng, Hao Yue, Zhang Jincheng, et al. Mechanism Study of the Surface Passivation Effect on Current Collapse Characteristics of AlGaN/GaN HEMTs［J］. Journal of Xidian University, 2008, 35(1): 125-128.
［12］王冲, 张金凤, 郝跃, 等. AlGaN/GaN HEMT在N₂中高温退火研究［J］. 西安电子科技大学学报, 2006, 33(6): 862-880.
Wang Chong, Zhang Jinfeng, Hao Yue, et al. Study of AlGaN/GaN HEMT High Temperature Anneal in N₂［J］. Journal of Xidian University, 2006, 33(6): 862-880.
［13］陈高鹏, 陈小娟, 刘新宇, 等. Ku波段30W脉冲微波功率放大器模块［J］. 半导体学报, 2008, 29(11): 2281-2285.
Chen Gaopeng, Chen Xiaojuan, Liu Xinyu, et al. A Ku Band 30W Pulsed Microwave Power Amplifier Module［J］. Journal of Semiconductors, 2008, 29(11): 2281-2285.

X-band single stage GaN solid-state power amplifier

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