4H-SiC n-MOSFET新型反型层迁移率模型

Abstract

Abstract:

An inversion channel electron mobility model of the 4H-SiC n-MOSFET is presented according to the physical mechanism. The quasi-2D Coulomb scattering mobility model based on the first principles takes account of the screening effect by carriers and temperature on Coulomb scattering, in which no empirical parameters are included. This can be directly embedded into the 2-D device simulator. The numerical relationship between the proportionality constant of the surface roughness scattering mobility model and the surface roughness degree is deduced. Correctness of the model is confirmed by comparison between simulated and experimental results. The simulated results show that Coulomb scattering plays a dominant role near the interface. Surface roughness scattering becomes more obvious at a higher gate voltage and it is the dominant scattering mechanism to limit the mobility in the inversion layer for the higher doped SiC MOSFET.

Key words: silicon carbide, inversion layers, mobility, Coulomb scattering

CLC Number:

TN386

TANG Xiaoyan;ZHANG Yuming;ZHANG Yimen. New inversion channel electron mobility model of the 4H-SiC n-MOSFET[J].J4, 2011, 38(1): 42-46.

References

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New inversion channel electron mobility model of the 4H-SiC n-MOSFET

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