应变Si/(101)SixGe1-x空穴迁移率

doi:10.3969/j.issn.1001-2400.2013.03.018

Abstract

Abstract:

The hole mobility enhancement mechanism in the strained Si(101) is studied on the basis of the Fermi Golden rule with the frame of the kp perturbation theory . The results obtained from our calculation show that the hole mobilities in high symmetry oriented directions in the strained Si(101) can be greatly enhanced under strain and that its averaged mobility increases about 2 times at most in comparison with that of the unstrained Si. The results can provide a valuable reference for the understanding of the strained Si-based device physics and its design.

Key words: strained Si, anisotropy, mobility

ZHAO Lixia;ZHANG Heming;DAI Xianying;XUAN Rongxi. Hole mobility of strained Si/(101)Si_xGe_1-x[J].J4, 2013, 40(3): 121-125.

References

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Hole mobility of strained Si/(101)Si_xGe_1-x

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Hole mobility of strained Si/(101)SixGe1-x

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