J4 ›› 2012, Vol. 39 ›› Issue (2): 168-174.doi: 10.3969/j.issn.1001-2400.2012.02.028

• Original Articles • Previous Articles     Next Articles

High-speed gate driver with a simple structure for power MOSFET

HE Huisen1,2;LAI Xinquan1,2;XU Wendan3;ZHAO Yongrui1,2;TIAN Lei4;DU Hanxiao1,2   

  1. (1. Research Inst. of Electronic CAD, Xidian Univ., Xi'an  710071, China;
    2. Ministry of Education Key Lab. of High-Speed Circuit Design and EMC, Xidian Univ., Xi'an  710071, China;
    3. Library, Xi'an Aerotechnical Collage, Xi'an  710071, China;
    4. School of Electronic Eng., Xi'an Univ. of Posts & Telecommunications, Xi'an  710121, China)
  • Received:2011-03-17 Online:2012-04-20 Published:2012-05-21
  • Contact: HE Huisen E-mail:xqlai@mail.xidian.edu.cn

Abstract:

A novel gate driver with a low transmission delay and ultra-low dead-time is proposed for driving power MOSFET. It controls the charge time and discharge time of the gate capacitor for minimizing dead-time, and no extra current bias and logic circuits are required, so it can simplify the driver circuit and reduce the noise in the current bias. Based on the 0.4 μm BCD process, the simulation is done in the Cadence environment, with good performance observed where the dead-time is below 10ns and the transmission delay is below 70ns. Then a Power Factor Correction (PFC) IC which utilizes this gate driver is tested for validation, and the test results indicate that the trise and tfall are 90ns and 55ns respectively that the power factor is 0.995, and that the Total Harmonic Distortion (THD) is as low as 6.5%.

Key words: driver circuits, power MOSFET, power factor correction, BCD process, dead time

CLC Number: 

  • TN386