| ［1］ Lee P. How P-Channel MOSFETs Can Simplify Your Circuit［EB/OL］.［2012-07-30］. www.irf.com/technical-info/appnotes/an-940.pdf.
［2］ Barkhordarian V. Power MOSFET Basics［EB/OL］. ［2012-07-15］. International Rectifier. www.irf.com/technical-info/appnotes/an-1084.pdf.
［3］ Kim Y S, Fossum J G. Physical DMOST Modeling for High Voltage IC CAD［J］. IEEE Transcations on Electronic Devices, 1990, 37(3): 797-803.
［4］ 杨晶琦. 电力电子器件原理与设计［M］. 北京：国防工业出版社, 1999.
［5］ Hu Chenming, Chi M H, Patel V M. Optimum Design of Power MOSFET's［J］. IEEE Transcations on Electronic Devices, 1984, 31(12): 1693-1700.
［6］ Baliga B J. Fundamentals of Power Semiconductor Devices［M］. New York: Springer Science Business Media, LLC, 2008.
［7］ 陈星弼. 功率MOSFET与高压集成电路［M］. 南京: 东南大学出版社, 1990.
［8］ He Jin, Chan Mansun, Zhang Xing, et al. A New Analytic Method to Design Multiple Floating Field Limiting Rings of Power Devices［J］. Solid-State Electronics, 2006, 50(7-8): 1375-1381.
［9］ Bose J V S C, de Souza M M, Narayanan E M S, et al. A Novel Metal Field Plate Edge Termination for Power Devices［J］. Microelectronics Journal, 2001, 32(4): 323-326. |
