可双向导通的凹栅隧穿晶体管

doi:10.3969/j.issn.1001-2400.2017.06.013

Abstract

Abstract:

The structure asymmetry of the conventional tunneling transistor makes it only able to have a unidirectional current path, which will cause the inconvenience of circuit design. In order to overcome this shortcoming, a novel recessed gate tunnel field-effect transistor with high performance is proposed in this paper and verified by silvaco TCAD software. The effects of process parameters such as doping concentration and geometry dimension on the energy band and properties of the device are analyzed. Simulation results show that the I_on／I_off ratio can reach 5×10⁶ at a 05V driving voltage and the minimum subthreshold swing of 12mV／dec at the 01V gate to source voltage. In general, this device has a large switching ratio and a very steep subthreshold slope under a low drive voltage. It is expected that this novel device can be one of the promising alternatives for ultra-low power applications.

Key words: band-to-band tunneling, tunnel field-effect transistors, recessed gate, bidirectional current path

CHEN Shupeng;WANG Shulong;LIU Hongxia;LI Wei;WANG Xing;WANG Qianqiong. Bidirectional current path recessed gate tunnel field-effect transistor[J].Journal of Xidian University, 2017, 44(6): 70-74+168.

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Bidirectional current path recessed gate tunnel field-effect transistor

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