硅通孔热应力导致器件迁移率变化分析

doi:10.3969/j.issn.1001-2400.2017.06.014

Abstract

Abstract:

This paper studies the mobility variations of the devices placed in different crystal orientations induced by the through silicon via thermal stress. According to the elasticity theory, the mismatch of thermal expansion coefficients between copper and silicon substrate can induce the through silicon via thermal stress, which may cause carrier mobility variations due to the piezoresistive effect. In this paper, a compact analytical model of the through silicon via thermal stress is given based on the planar strain theory. Then the impacts of the through silicon via thermal stress on carrier mobility are presented by using Matlab with the channel direction along［100］ and［110］, respectively. And the Keep Off Zone is defined for considering the reliability of the device. Finally, we draw a conclusion that the［100］ crystal orientation and the［-110］ crystal orientation should be preferred as the NMOS device and the PMOS device, respectively.

Key words: through silicon via, thermal stress, mobility, keep off zone

DONG Gang;YAO Yitong;LIU Dang;YANG Yintang. Analysis of through silicon via thermal stress induced device mobility variations[J].Journal of Xidian University, 2017, 44(6): 75-78+98.

References

［1］陈鹏飞, 宿磊, 独莉, 等. TSV三维集成的缺陷检测技术［J］. 半导体技术, 2016, 41(1): 63-69.
CHEN Pengfei, SU Lei, DU Li, et al. Defect Inspection Technologies for TSV Based 3D Integration［J］. Semiconductor Technology, 2016, 41(1): 63-69.
［2］ CROES K, DE MESSEMAEKER J, LI Y, et al. Reliability Challenges Related to TSV Integration and 3D Stacking［J］. IEEE Design and Test, 2016, 33(3): 37-45.
［3］ DENG Q, HUANG L, SHANG J, et al. Study on TSV-Cu Protrusion under Different Annealing Conditions and Optimization［C］//Proceedings of the 2016 17th International Conference on Electronic Packaging Technology. Piscataway: IEEE, 2016: 380-383.
［4］ SPINELLA L, IM J H, HO P S, et al. Correlation of through Silicon Via(TSV) Dimension Scaling to TSV Stress and Reliability for 3D Interconnects［J］. International Symposium on Microelectronics, 2016(1): 000160-000164.
［5］ SPROCH J D, MOROZ V, XU X, et al. Placing Transistors in Proximity to through-silicon Vias: USP 8661387［P］. 2014-02-25.
［6］ ZHU Y, GHOSH K, LI H Y, et al. On the Origins of Near-surface Stresses in Silicon around Cu-filled and CNT-filled through Silicon Vias［J］. Semiconductor Science and Technology, 2016, 31(5): 055008.
［7］ West J, Choi Y S, Vartuli C. Practical Implications of via-middle Cu TSV-induced Stress in a 28nm CMOS Technology for Wide-IO Logic-memory Interconnect［C］//Proceedings of the Symposium on VLSI Technology. Piscataway: IEEE, 2012: 101-102.
［8］ FENG W, BUI T T, WATANABE N, et al. Fabrication and Stress Analysis of Annular-trench-isolated TSV［J］. Microelectronics Reliability, 2016, 63: 142-147.
［9］ HSIEH C C, CHIU T C. Analysis of Carrier Mobility Change in Silicon Inversion Layer Due to through-silicon via Thermal Stress［C］//Proceedings of the International Microsystems, Packaging, Assembly and Circuits Technology Conference. Piscataway: IEEE, 2012: 351-354.
［10］ MARELLA S K, KUMAR S V, SAPATNEKAR S S. A Holistic Analysis of Circuit Timing Variations in 3D-ICs with Thermal and TSV-induced Stress Considerations［C］//Proceedings of the IEEE/ACM International Conference on Computer-aided Design, Digest of Technical Papers. Piscataway: IEEE, 2012: 317-324.
［11］ HAN S, WENTZLOFF D D. Characterization of the Proximity Effect from Tungsten TSVs on 130-nm CMOS Devices in 3-D ICs［J］. IEEE Transactions on Very Large Scale Integration(VLSI) Systems, 2014, 22(9): 2025-2029.
［12］ YU L, CHANG W Y, ZUO K, et al. Methodology for Analysis of TSV Stress Induced Transistor Variation and Circuit Performance［C］//Proceedings of the International Symposium on Quality Electronic Design. Piscataway: IEEE, 2012, 86: 216-222.
［13］ JUNG M, MITRA J, PAN D Z, et al. TSV Stress-aware Full-chip Mechanical Reliability Analysis and Optimization for 3D IC［J］. Communications of the ACM, 2014, 57(1): 107-115.
［14］刘荡. 硅通孔热应力对于器件性能的影响的研究［D］. 西安: 西安电子科技大学, 2015.
［15］ LU K H, ZHANG X, RYU S K, et al. Thermo-mechanical Reliability of 3-D ICs Containing through Silicon Vias［C］//Proceedings of the Electronic Components and Technology Conference. Piscataway: IEEE, 2010: 630-634.
［16］ SELVANAYAGAM C S, LAU J H, ZHANG X, et al. Nonlinear Thermal Stress/Strain Analyses of Copper Filled TSV(through Silicon Vias) and Their Flip-chip Microbumps［C］//Proceedings of the Electronic Components and Technology Conference. Piscataway: IEEE, 2008: 1073-1081.
［17］ LIU R G, XU Z H, YIN J, et al. A Coupled Mechanical and Electrical Model Concerning Piezoresistive Effect of CFRP Materials［J］. Composites Part B: Engineering, 2016, 96: 125-135.
［18］ IRIE H, KITA K, KYUNO K, et al. In-plane Mobility Anisotropy and Universality under Uni-axial Strains in N-and p-MOS Inversion Layers on(100), (110), and(111) Si［C］//Proceedings of the International Electron Devices Meeting. Piscataway: IEEE, 2004: 225-228.

[1]	GE Qin,XU Bo,TAO Hongqi,WANG Weibo,MA Xiaohua,GUO Fangjin,LIU Yu. W-band 3.4 W/mm GaN power amplifier MMIC [J]. Journal of Xidian University, 2020, 47(1): 24-29.
[2]	ZHAO Fubin,QIU Yuanying,JIA Fei,Ma Hongbo. Fatigue lifetime analysis of the electronic packaging structures under the combined thermal stress and vibration loading conditions [J]. Journal of Xidian University, 2019, 46(2): 54-60.
[3]	ZHOU Yuming;LIU Hangzhi;YANG Tingting;WANG Bing. Circuit model of SiC MOSFET and application [J]. Journal of Xidian University, 2018, 45(3): 97-101+129.
[4]	DONG Yanlei;LI Dong'ang;LIU Qin;WANG Chunting;SHI Keyi. Research on mobility management strategy based on the mobile foreign agent domainin satellite networks [J]. Journal of Xidian University, 2018, 45(3): 156-162.
[5]	WANG Haili;JI Huifang;SUN Shuxiang;DING Peng;JIN Zhi;WEI Zhichao;ZHONG Yinghui;LI Yuxiao. Proton irradiation damage mechanism of the InAlAs／InGaAs／InAlAs quantum well [J]. Journal of Xidian University, 2017, 44(4): 151-155+161.
[6]	DONG Shuai;WANG Zhenzhan;HE Qiurui;ZHANG Lei. Design of an active cold noise source under the normal temperature condition [J]. Journal of Xidian University, 2017, 44(1): 112-118.
[7]	YANG Xiaofeng;SHI Jiangyi;MA Peijun;HAO Yue. Design of the S band 6bits high precision phase shifter [J]. J4, 2014, 41(2): 125-129.
[8]	ZHAO Lixia;ZHANG Heming;DAI Xianying;XUAN Rongxi. Hole mobility of strained Si/(101)Si_xGe_1-x [J]. J4, 2013, 40(3): 121-125.
[9]	ZHENG Bo;ZHANG Hengyang;HUANG Guoce;CHU Zhenyong;WANG Yequn. Design and implementation of a 3-D smooth mobility model [J]. J4, 2011, 38(6): 179-184.
[10]	TANG Xiaoyan;ZHANG Yuming;ZHANG Yimen. New inversion channel electron mobility model of the 4H-SiC n-MOSFET [J]. J4, 2011, 38(1): 42-46.
[11]	CHEN Chen;GAO Xin-bo. Mobility supporting adaptive MAC protocol in WSN [J]. J4, 2010, 37(2): 279-284.
[12]	YANG Wei-dong;MA Jian-feng;YANG Chao. Fast secure handoff scheme for wireless LANs [J]. J4, 2008, 35(3): 474-477.
[13]	YUE Yuan-zheng;HAO Yue;ZHANG Jin-cheng;FENG Qian. Mechanism study of the surface passivation effect on current collapse characteristics of AlGaN/GaN HEMTs [J]. J4, 2008, 35(1): 125-128.
[14]	HUO Hong-wei;ZHANG Hong-ke;ZHANG Si-dong. Research on a wireless sensor network used in railway track inspection [J]. J4, 2007, 34(7): 35-38.
[15]	WANG Chong;ZHANG Jin-feng;HAO Yue;FENG Qian;YANG Yan;ZHANG Jin-cheng. Study of AlGaN/GaN HEMT high temperature anneal in N₂ [J]. J4, 2006, 33(6): 862-865.

Analysis of through silicon via thermal stress induced device mobility variations

PDF (PC)

Like

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 15

Metrics

Comments

Recommended 10