Abstract: Based on the Percolation theory and defects creation mechanisms of bothe E model and 1/E model, a unified percolation model for gate oxide breakdown is brought forward. The trigging mechanism of gate oxide breakdown is believed to be the extending of the localized states induced by the defects such as oxygen vacancy in an oxide. The defect creation dynamics such as oxygen vacancy is described synthetically. As a result, the results of this model both in a high electric field and in a low electric field fit well with the experimental data. So, the long-existing dipute between 1/E and E models is settled.

Key words: gate oxide, breakdown, percolation, model