非晶硅薄膜晶体管关态电流的物理模型

doi:10.3969/j.issn.1001-2400.2014.05.023

J4 ›› 2014, Vol. 41 ›› Issue (5): 135-140.doi: 10.3969/j.issn.1001-2400.2014.05.023

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Physical model for the off current in amorphous silicon thin film transistors

EN Yunfei^1,2;LIU Yuan²;HE Yujuan²;SHI Qian²;HAO Yue¹

(1. School of Microelectronic, Xidian Univ., Xi'an 710071, China;
2. China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China)

Received:2013-05-17 Online:2014-10-20 Published:2014-11-27
Contact: EN Yunfei E-mail:Enyf@ceprei.com

Abstract

Abstract:

A physical model for the off current in amorphous silicon thin film transistors is proposed. Firstly, an approximation for the band bending in the back interface as a function of the gate-source voltage is derived in the reverse subthreshold region, and then a current model due to electron conduction in the back channel is developed by considering the deep states. Secondly, a rate used to describe the escaping possibility of holes in the bulk a-Si:H layer is proposed based on the one-dimensional continuity equation. By considering the hole generation rate in the drain depletion region and the hole escaping rate in the bulk a-Si:H layer, a leakage current model due to hole conduction in the front channel is developed. The proposed model has been verified using the experimental data.

Key words: amorphous silicon, thin film transistors, off current, leakage current, reverse subthreshold current

EN Yunfei;LIU Yuan;HE Yujuan;SHI Qian;HAO Yue. Physical model for the off current in amorphous silicon thin film transistors[J].J4, 2014, 41(5): 135-140.

References

［1］ Liao C W, He C D, Chen T, et al. Design of Integrated Amorphous-silicon Thin-film Transistor Gate Driver ［J］. Journal of Display Technology, 2013, 9(1): 7-16.
［2］ Servati P, Nathan A. Modeling of the Reverse Characteristics of a-Si:H TFTs ［J］. IEEE Transactions on Electron Devices, 2002, 49(5): 812-819.
［3］ Lemmi F, Street R A. The Leakage Currents of Amorphous Silicon Thin-film Transistors: Injection Currents, Back Channel Currents and Stress Effects ［J］. IEEE Transactions on Electron Devices, 2000, 47(12): 2404-2409.
［4］ Wang L J, Zhu J, Liu C L, et al. Improvement of Sub-threshold Current Models for a-Si:H Thin-film Transistors ［J］. Solid-state Electronics, 2007, 51(5): 703-707.
［5］ Yoon K, Jang Y H, Kim B K, et al. Voltage Dependence of off Current in a-Si:H TFT Under Backlight Illumination ［J］. Journal of Non-Crystalline Solids, 1993, 164(2): 747-750.
［6］ Young K K. Short-channel Effect in Fully Depleted SOI MOSFETs ［J］. IEEE Transactions on Electron Devices, 1989, 36(2): 399-402.
［7］ Liu Y, Yao R H, Li B, et al. An Analytical Model Based on Surface Potential for a-Si:H Thin-film Transistors ［J］. Journal of Display Technology, 2008, 4(2): 180-187.
［8］ Deng W L, Zheng X R, Chen R S, et al. Subthreshold Characteristics of Polysilicon TFTs ［J］. Solid-state Electronics, 2008, 52(5): 695-703.
［9］ Park H R, Lee S H, Lee B T. Characterization of the Hole Capacitance of Hydrogenated Amorphous Silicon Metal Insulator Semiconductor Structures ［J］. Journal of Applied Physics, 2001, 90(12): 6226-6229.
［10］ Lui O K B, Migliorato P. A New Generation Recombination Model for Device Simulation Including the Poole-Frenkel Effect and Phonon-assisted Tunneling ［J］. Solid-state Electronics, 1997, 41(4): 575-583.
［11］ Wu W J, Yao R H, Li S H, et al. A Compact Model for Polysilicon TFTs Leakage Current Including the Poole-Frenkel Effect ［J］. IEEE Transactions on Electron Devices, 2007, 54(11): 2975-2983.
［12］ Lee J, Jang S, Lee J, et al. Extraction of Electron Band Mobility in Amorphous Silicon Thin-film Transistors ［J］. Japanese Journal of Applied Physics, 2012, 51(2): 021402.

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Physical model for the off current in amorphous silicon thin film transistors

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