垂直式MOCVD中生长参数对GaN材料生长的影响

doi:10.3969/j.issn.1001-2400.2016.05.031

Abstract

Abstract:

A simulation of reactants in the transfer and reaction process during the GaN growth in a vertical MOCVD reactor is presented. The results show that the GaN growth rate and thickness uniformity are all affected by the chamber pressure and the velocity of reactants into the chamber. With the increasing velocity of reactants into the chamber, pre-reaction will be enhanced, GaN growth rate will be increased and thickness uniformity decreased. With the inlet velocity remaining the same and chamber pressure decreasing, the growth rate is improved within a certain scope, but the thickness uniformity may be increased at the same time with the thickness of the central region of the substrate increased.

Key words: GaN, MOCVD, GaN growth rate, reaction kinetics

FENG Lansheng;GUO Runqiu;ZHANG Jincheng. Effect of growth parameters on GaN in a vertical MOCVD reactor[J].Journal of Xidian University, 2016, 43(5): 178-182.

References

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Effect of growth parameters on GaN in a vertical MOCVD reactor

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