Abstract: The I-V characteristics of the Ni/4H-SiC Schottky Barrier Diode(SBD) are measured first in the temperature range from 297K to 677K. The diode shows an excellent forward I-V characteristic. The devices present a behavior in accordance with the thermionic emission theory in the forward bias. The temperature influences obviously the forward characteristic of the SBD. The influence on the reverse current is small in the range of the applied voltages of less than 30V. The ideal factor n ranges from 1.165 to 1.872, the Barrier height ranges from 0.916 to 2.117eV, and the threshold voltage is 0.5V.

Key words: silicon carbide, Schottky barrier diode, I-V characteristics, thermionic emission theory