FLOTOX结构的EEPROM可靠性研究

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The reliability study of EEPROM with the FLOTOX structure

LUO Hong-wei1,2;YANG Yin-tang1;ZHU Zhang-ming1;XIE Bin3;WANG Jin-yan3

(1. Research Inst. of Microelectronics, Xidian Univ., Xi'an 710071, China;
2. Analyzing Center, No.5 Institute of CETC, Guangzhou 510610, China;
3. Mincroelectroics Institute, Peking Univ., Beijing 100871, China)

Received:1900-01-01 Revised:1900-01-01 Online:2004-04-20 Published:2004-04-20

Abstract

Abstract: A type of EEPROM with the FLOTOX structure is intoduced. The main reliability issues of the FLOTOX EEPROM are studied, i.e., the degradation of the programming windows, the degradation of the retention characteristics and the time dependent dielectric breakdown(TDDB). The reliability of FLOTOX is correlative to the quality of the tunnel oxide. The degradation of FLOTOX depends on the trap charges which come from the tunnel oxide, which is proved by experimental results.

Key words: FLOTOX, EEPROM, degradation, reliability

CLC Number:

TN406

LUO Hong-wei1;2;YANG Yin-tang1;ZHU Zhang-ming1;XIE Bin3;WANG Jin-yan3.

The reliability study of EEPROM with the FLOTOX structure

[J].J4, 2004, 31(2): 174-176.

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The reliability study of EEPROM with the FLOTOX structure

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