n沟6H-SiC MOSFET直流特性和小信号参数解析模型

• Original Articles • Previous Articles Next Articles

Analytical model for DC characteristics and small signal parameters of the n-channel 6H-SiC MOSFET

WANG Ping(1);YANG Yin-tang(1);YANG Yan(1);JIA Hu-jun(1);QU Han-zhang(2)

(1) Ministry of Edu. Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi′an 710071， China
(2) Dept. of Applied Mathematics and Applied Physics, Xi′an Univ. of Post and Telecommunications, Xi′an 710069， China

Received:1900-01-01 Revised:1900-01-01 Online:2005-02-20 Published:2005-02-20

Abstract

Abstract: Based on an analytical solution of the Poisson equation and iterative calculation of the surface potential, an improved physical-based analytical model which can be used in all the operation regions for the dc I-V characteristics and small signal parameters of the n-channel 6H-SiC MOSFET is proposed utilizing the charge-sheet approximation. The influences of incomplete ionization of deep-lying impurity state and the interface state charges that have an important effect on the 6H-SiC MOSFET are considered simultaneously. The simulated maximum transconductance is 54μS at a gate voltage of 1. 9V when drain bias is 0. 05V. The comparison between simulations and physical measurements shows a good agreement. The model is imple in calculation and distinct in physical mechanism, and therefore it is suitable for the design of and the research on the SiC device and circuit.

Key words: 6H-SiC, MOSFET, I-V characteristics, small signal parameters, analytical model

CLC Number:

TN304.2+4

WANG Ping(1);YANG Yin-tang(1);YANG Yan(1);JIA Hu-jun(1);QU Han-zhang(2).

Analytical model for DC characteristics and small signal parameters of the n-channel 6H-SiC MOSFET

[J].J4, 2005, 32(1): 89-93.

[1]	PU Shi;DU Lin;ZHANG Dexi. Novel combined edge termination for P-channel VDMOS [J]. J4, 2015, 42(6): 70-74.
[2]	DAI Xianying;LI Zhi;ZHANG Heming;HAO Yue;WANG Lin;ZHA Dong;WANG Xiaochen;FU Yich. Threshold voltage model of the surface Ge channel pMOSFET [J]. J4, 2012, 39(4): 94-97+113.
[3]	HE Huisen;LAI Xinquan;XU Wendan;ZHAO Yongrui;TIAN Lei;DU Hanxiao. High-speed gate driver with a simple structure for power MOSFET [J]. J4, 2012, 39(2): 168-174.
[4]	LI Weihua;DU Lei;BAO Junlin;MA Zhongfa. Quantitative identification method for the ionizing radiation induced 1/f noise in MOSFETs [J]. J4, 2011, 38(4): 6-10+48.
[5]	SHI Lingfeng;WANG Qingbin;XU Wendan;MIAO Zihui. Design of the low-power MOSFET driver circuit for APFC [J]. J4, 2011, 38(1): 54-58+65.
[6]	LI Kang; MA Xiao-hua; HAO Yue; CHEN Hai-feng; WANG Jun-ping. Modeling and simulation of the HCI degradation model for the NMOSFET in deep submicron circuits [J]. J4, 2006, 33(5): 721-724.
[7]	WANG Ping;YANG Yin-tang;WANG Xu. Study of temperature properties of the SiC CMOS inverter [J]. J4, 2005, 32(3): 396-399.
[8]	WANG Yue-hu;ZHANG Yi-men;ZHANG Yu-ming;CHEN Rui-biao;WANG Lei;ZHOU Yong-hua. Characteristics of the Ni/4H-SiC Schottky barrier diode at high temperatures [J]. J4, 2004, 31(1): 63-667.

Analytical model for DC characteristics and small signal parameters of the n-channel 6H-SiC MOSFET

Like

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 8

Metrics

Comments

Recommended 9