铟量子点实现单电子晶体管方法

GUO Rong-hui(1);ZHAO Zheng-ping(1);HAO Yue(1);LIU Yu-gui(2); WU Yi-bin(2);Lü Miao(2)

(1) Research Inst. of Microelectronics, Xidian Univ., Xi’an 710071， China
(2) Hebei Semiconductor Research Institute, Shijiazhuang 050051， China

Received:1900-01-01 Revised:1900-01-01 Online:2006-04-20 Published:2006-04-20

CLC Number:

GUO Rong-hui(1);ZHAO Zheng-ping(1);HAO Yue(1);LIU Yu-gui(2); WU Yi-bin(2);Lü Miao(2).

A novel SET process with Indium quantum islands

[J].J4, 2006, 33(2): 186-189.

[1]	WANG Lei;ZHANG Yi-men;ZHANG Yu-ming;SHENG Li-zhi. Simulation and analysis of high frequency small-signal characteristics for 4H-SiC MESFETs [J]. J4, 2004, 31(6): 825-828.
[2]	WANG Yue-hu;ZHANG Yi-men;ZHANG Yu-ming;CHEN Rui-biao;WANG Lei;ZHOU Yong-hua. Characteristics of the Ni/4H-SiC Schottky barrier diode at high temperatures [J]. J4, 2004, 31(1): 63-667.
[3]	Authors. title [J]. J4, 2003, 30(6): 771-775.
[4]	Authors. title [J]. J4, 2003, 30(4): 429-433.
[5]	Authors. title [J]. J4, 2002, 29(2): 153-157.
[6]	Authors. title [J]. J4, 2002, 29(2): 157-163.
[7]	Authors. title [J]. J4, 2002, 29(2): 149-153.
[8]	Authors. title [J]. J4, 2002, 29(1): 92-96.
[9]	Authors. title [J]. J4, 2001, 28(6): 776-781.
[10]	Authors. title [J]. J4, 2001, 28(6): 792-797.
[11]	Authors. title [J]. J4, 2001, 28(4): 467-472.
[12]	Authors. title [J]. J4, 2000, 27(1): 30-35.

PDF (PC)