Abstract: Based on the investigation of the deep-submicron silicided GGNMOSFET under ESD stress, a current crowding model at the edge of source/drain contact is presented, which includes the impact of parasitic series resistance. The model indicates that current crowding can be found in the front edge of the source/drain contact because of different device temperatures and doping concentrations of the diffusion, so a new hot spot starts to develop in the source and the thermal breakdown characteristics of the source/drain are affected at the same time. The source-side thermal breakdown mechanism of the devices can be explained well by this model.

Key words: ESD, thermal breakdown, contact resistance