高热稳定性多发射极功率SiGe HBT的研制

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Multi-finger power SiGe HBT with high thermal stability

JIN Dong-yue;SHEN Pei;ZHANG Wan-rong;WANG Yang;SHA Yong-ping;HE Li-jian;
ZHANG Wei;XIE Hong-yun

(College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China)

Received:1900-01-01 Revised:1900-01-01 Online:2007-09-20 Published:2007-09-20

Abstract

Abstract: A multi-finger power SiGe heterojunction bipolar transistor (HBT) with non-uniform finger spacing was fabricated to improve the thermal stability. Experimental results show that the peak temperature of SiGe HBT with non-uniform finger spacing is lowered by 15.87Kcompared with that of uniform finger spacing HBT under the same operational condition. The temperature profile across the device can be improved obviously at different biases for the same HBT with non-uniform finger spacing. With the increase of IC, the capability of HBT with non-uniform finger spacing to improve the temperature profile is more significant. Because of the decrease in peak temperature and the improvement of temperature profile, the power SiGe HBT with non-uniform spacing can operate at a higher bias and hence has higher power handling capability.

Key words: SiGe, HBT, power

CLC Number:

TN322.8

JIN Dong-yue;SHEN Pei;ZHANG Wan-rong;WANG Yang;SHA Yong-ping;HE Li-jian; ZHANG Wei;XIE Hong-yun. Multi-finger power SiGe HBT with high thermal stability
[J].J4, 2007, 34(7): 177-180.

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Multi-finger power SiGe HBT with high thermal stability

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